IRF7820PBF

N-Channel MOSFET, a single-element silicon Metal-Oxide Semiconductor Field-Effect Transistor, offers a 200V Drain to Source Breakdown Voltage and 3.7A Continuous Drain Current. Featuring a low 78mΩ Drain to Source Resistance (Rds On Max) and a nominal Vgs of 4V, this surface mount device operates within a -55°C to 150°C temperature range. It boasts fast switching characteristics with a 7.1ns Turn-On Delay Time and 12ns Fall Time, packaged in a compact 5mm x 4mm x 1.5mm SOIC (SOP-8) with lead-free construction.