IRF7821PBF

N-Channel Power MOSFET, 30V drain-source voltage, 13.6A continuous drain current, and 9.1mΩ maximum drain-source on-resistance. Features include a 1.01nF input capacitance, 7.3ns fall time, 6.3ns turn-on delay, and 9.7ns turn-off delay. This single-element silicon Metal-oxide Semiconductor FET is housed in a lead-free, surface-mount SOP-8 package with a maximum power dissipation of 2.5W. Operating temperature range is -55°C to 155°C.