N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOIC package. Features a continuous drain current of 18A, a drain-source voltage rating of 40V, and a maximum drain-source on-resistance of 5mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes a nominal gate-source voltage of 2.25V and exhibits turn-on delay time of 14ns and turn-off delay time of 21ns. This component is RoHS compliant.
PackageSOIC
Current Rating18A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7842TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
5MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
4.5nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2.25V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
21ns
Turn-On Delay Time
14ns
DC Rated Voltage
40V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7842TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7842TRPBF to view detailed technical specifications.
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