N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOIC package. Features a continuous drain current of 18A, a drain-source voltage rating of 40V, and a maximum drain-source on-resistance of 5mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes a nominal gate-source voltage of 2.25V and exhibits turn-on delay time of 14ns and turn-off delay time of 21ns. This component is RoHS compliant.
PackageSOIC
Current Rating18A
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRF7842TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 40V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7842TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7842TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
