International Rectifier
IRF7901D1
Power Field-Effect Transistor, 6.2A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7901D1 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 780pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 38mR |
| RoHS Compliant | No |
| Series | FETKY™ |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7901D1 Datasheet
Download the complete datasheet for International Rectifier IRF7901D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.