International Rectifier
IRF7904TRPBF
Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF7904TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 16.2MR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7904TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7904TRPBF to view detailed technical specifications.
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