Dual N-Channel Power MOSFET, 30V Vds, 11A Continuous Drain Current. Features low Rds(on) of 16.4mΩ at Vgs=10V, 850pF input capacitance, and 2W power dissipation. Encased in a lead-free SOIC package for surface mounting, operating from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7907TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 16.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7907TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7907TRPBF to view detailed technical specifications.
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