N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 12V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low Drain to Source Resistance (Rds(on)) of 15mR. This 2-element device is housed in a lead-free SOIC package with surface mount termination. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
International Rectifier IRF7910PBF technical specifications.
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