N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 12V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low Drain to Source Resistance (Rds(on)) of 15mR. This 2-element device is housed in a lead-free SOIC package with surface mount termination. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
PackageSOIC
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7910PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
12V
Dual Supply Voltage
12V
Fall Time
6.3ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.73nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.4ns
DC Rated Voltage
12V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7910PBF Datasheet
Download the complete datasheet for International Rectifier IRF7910PBF to view detailed technical specifications.
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