International Rectifier
IRF8010HR
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
MountingThrough Hole
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Technical Specifications
International Rectifier IRF8010HR technical specifications.
General
Continuous Drain Current (ID)
80A
Fall Time
120ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
61ns
Turn-On Delay Time
15ns
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF8010HR Datasheet
Download the complete datasheet for International Rectifier IRF8010HR to view detailed technical specifications.
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