International Rectifier
IRF8010STRRPBF
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF8010STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 3.83nF |
| Max Power Dissipation | 260W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8010STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8010STRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.