N-Channel MOSFET transistor for surface mount applications, featuring a 30V drain-source breakdown voltage and a continuous drain current of 17.2A. This component offers a low on-resistance of 7.4mR and a maximum power dissipation of 2.5W. Designed with a 2.91nF input capacitance and fast switching times, including a 3.5ns fall time, it operates within a temperature range of -55°C to 150°C. The 8-pin SOIC package ensures compact integration.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8113GPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.91nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8113GPBF Datasheet
Download the complete datasheet for International Rectifier IRF8113GPBF to view detailed technical specifications.
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