N-channel MOSFET transistor for surface mount applications. Features a 25V drain-source breakdown voltage and a continuous drain current of 25A. Offers a low drain-source on-resistance of 2.7mΩ at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in SOIC with a 2.7mΩ Rds On Max.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8252PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 2.7MR |
| Dual Supply Voltage | 25V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 5.305nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 23ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8252PBF Datasheet
Download the complete datasheet for International Rectifier IRF8252PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.