N-Channel Power MOSFET, designed for efficient power switching. Features a low drain-source on-resistance of 2.7mR at a 10V gate-source voltage, enabling high current handling up to 25A continuous drain current. With a drain-source breakdown voltage of 25V and a maximum power dissipation of 2.5W, this surface-mount device is suitable for demanding applications. Its SOIC package and fast switching times (12ns fall time, 23ns turn-on delay) ensure optimal performance. This RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8252TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 2.7MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.305nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8252TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8252TRPBF to view detailed technical specifications.
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