International Rectifier
IRF8302MTR1PBF
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power104W
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Technical Specifications
International Rectifier IRF8302MTR1PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 190A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.03nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF8302MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF8302MTR1PBF to view detailed technical specifications.
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