International Rectifier
IRF8308MTR1PBF
Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF8308MTR1PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.404nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8308MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF8308MTR1PBF to view detailed technical specifications.
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