International Rectifier
IRF8327STRPBF
Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF8327STRPBF technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.43nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9.3ns |
| Turn-On Delay Time | 7.8ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8327STRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8327STRPBF to view detailed technical specifications.
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