N-Channel Power MOSFET, 30V Vdss, 11A continuous drain current, and 0.0119 ohm drain-source on-resistance. Features a 1.5mm height, 5mm length, and 4mm width in an SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching times with a 6.7ns turn-on delay and 4.4ns fall time.
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF8707PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Resistance
17.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11.9MR
Dual Supply Voltage
30V
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
760pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
7.3ns
Turn-On Delay Time
6.7ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF8707PBF Datasheet
Download the complete datasheet for International Rectifier IRF8707PBF to view detailed technical specifications.
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