N-channel Power MOSFET, SOIC package, featuring a 30V drain-source voltage and 11A continuous drain current. Offers a low 11.9mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.8V. Operates with a gate-source voltage up to 20V, exhibiting fast switching speeds with turn-on delay of 6.7ns and fall time of 4.4ns. This surface-mount component supports a maximum power dissipation of 2.5W and operates across a temperature range of -55°C to 150°C, adhering to RoHS compliance.
International Rectifier IRF8707TRPBF technical specifications.
Download the complete datasheet for International Rectifier IRF8707TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
