N-channel Power MOSFET, SOIC package, featuring a 30V drain-source voltage and 11A continuous drain current. Offers a low 11.9mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.8V. Operates with a gate-source voltage up to 20V, exhibiting fast switching speeds with turn-on delay of 6.7ns and fall time of 4.4ns. This surface-mount component supports a maximum power dissipation of 2.5W and operates across a temperature range of -55°C to 150°C, adhering to RoHS compliance.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF8707TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11.9MR
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.8V
Turn-Off Delay Time
7.3ns
Turn-On Delay Time
6.7ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF8707TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8707TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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