N-channel Power MOSFET, SOIC package, featuring a 30V drain-source voltage and 11A continuous drain current. Offers a low 11.9mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.8V. Operates with a gate-source voltage up to 20V, exhibiting fast switching speeds with turn-on delay of 6.7ns and fall time of 4.4ns. This surface-mount component supports a maximum power dissipation of 2.5W and operates across a temperature range of -55°C to 150°C, adhering to RoHS compliance.
PackageSOIC
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRF8707TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.9MR |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8707TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8707TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
