International Rectifier
IRF8714GTRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF8714GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.02nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 8.7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8714GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8714GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.