International Rectifier
IRF8915TRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageSOIC
Current Rating8.9A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF8915TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Current Rating | 8.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18.3MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 7.1ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8915TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8915TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.