International Rectifier
IRF9140
Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AA
MountingThrough Hole
Power125W
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Technical Specifications
International Rectifier IRF9140 technical specifications.
General
Package/Case
TO-204AA
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
-100V
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
-100V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Packaging
Bulk
Power Dissipation
125W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF9140 Datasheet
Download the complete datasheet for International Rectifier IRF9140 to view detailed technical specifications.
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