International Rectifier
IRF9332TRPBF
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF9332TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9.8A
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.27nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Power Dissipation
2.5W
Rds On Max
17.5mR
RoHS Compliant
Yes
Series
HEXFET®
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9332TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9332TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.