International Rectifier
IRF9335TRPBF
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
PackageSOIC N
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF9335TRPBF technical specifications.
General
Package/Case
SOIC N
Continuous Drain Current (ID)
-5.4A
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
59MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
386pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.8V
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.7ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9335TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9335TRPBF to view detailed technical specifications.
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