P-Channel Power MOSFET, featuring a -30V drain-source voltage and -8A continuous drain current. This surface mount device offers a low on-resistance of 21mΩ at a nominal Vgs of -1.8V. It operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. The component is housed in an MS-012AA (SOP-8) package, is RoHS compliant, and utilizes silicon metal-oxide semiconductor technology.
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF9362TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -8A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 21MR |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9362TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9362TRPBF to view detailed technical specifications.
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