P-channel MOSFET, 30V drain-source breakdown voltage, 9.2A continuous drain current, and 19.4mΩ drain-source resistance. Features a single element configuration, surface mount SO-8 package (5mm length, 4mm width, 1.5mm height), and a maximum power dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C, with turn-on delay of 16ns and fall time of 49ns. This component is RoHS compliant and HALOGEN FREE.
PackageSO
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF9393TRPBF technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 19.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.11nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 13.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 16ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9393TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9393TRPBF to view detailed technical specifications.
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