IRF9520N

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

PackageTO-220AB

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International Rectifier IRF9520N technical specifications.

Package/Case

TO-220AB

Continuous Drain Current (ID)

-6.8A

Drain to Source Voltage (Vdss)

-100V

Max Operating Temperature

175°C

Max Power Dissipation

48W

Nominal Vgs

-4V

Reach SVHC Compliant

Unknown

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.