IRF9520NLPBF

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

MountingThrough Hole

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International Rectifier IRF9520NLPBF technical specifications.

Package/Case

TO-262-3

Continuous Drain Current (ID)

6.8A

Drain to Source Breakdown Voltage

-100V

Drain to Source Voltage (Vdss)

100V

Input Capacitance

350pF

Max Power Dissipation

3.8W

Mount

Through Hole

Package Quantity

Packaging

Rail/Tube

Rds On Max

480mR

RoHS Compliant

Yes

Series

HEXFET®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.