P-channel power MOSFET with 100V drain-source breakdown voltage and 6.8A continuous drain current. Features a low 480mΩ maximum drain-source on-resistance and 3.8W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 31ns. Operating temperature range is -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF9520NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
6.8A
Drain to Source Breakdown Voltage
-100V
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
480mR
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Elements
1
On-State Resistance
480mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
28ns
Turn-On Delay Time
14ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9520NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF9520NSPBF to view detailed technical specifications.
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