P-channel power MOSFET with 100V drain-source breakdown voltage and 6.8A continuous drain current. Features a low 480mΩ maximum drain-source on-resistance and 3.8W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 31ns. Operating temperature range is -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF9520NSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 480mR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| On-State Resistance | 480mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 14ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9520NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF9520NSPBF to view detailed technical specifications.
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