International Rectifier
IRF9530NLPBF
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
Power3.8W
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Technical Specifications
International Rectifier IRF9530NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
-100V
Drain to Source Voltage (Vdss)
-100V
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
760pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
3.8W
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9530NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF9530NLPBF to view detailed technical specifications.
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