N-Channel Power MOSFET, 20V Vds, 12A continuous drain current, and 0.0093 ohm Rds(on). Features 2 elements, 7.5ns fall time, and 15ns turn-off delay. Housed in a lead-free SOIC package with surface mount capability, operating from -55°C to 150°C.
PackageSOIC
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF9910PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 2.55V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.55V |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9910PBF Datasheet
Download the complete datasheet for International Rectifier IRF9910PBF to view detailed technical specifications.
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