N-Channel Power MOSFET, 20V Vds, 12A continuous drain current, and 0.0093 ohm Rds(on). Features 2 elements, 7.5ns fall time, and 15ns turn-off delay. Housed in a lead-free SOIC package with surface mount capability, operating from -55°C to 150°C.
PackageSOIC
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF9910PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12A
Current Rating
10A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
18.3mR
Drain to Source Voltage (Vdss)
20V
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.55V
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.55V
Turn-Off Delay Time
15ns
DC Rated Voltage
20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9910PBF Datasheet
Download the complete datasheet for International Rectifier IRF9910PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
