International Rectifier
IRF9Z24NL
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating-12A
MountingThrough Hole
Power60W
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Technical Specifications
International Rectifier IRF9Z24NL technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | -12A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 350pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| Rds On Max | 175mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | -55V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF9Z24NL Datasheet
Download the complete datasheet for International Rectifier IRF9Z24NL to view detailed technical specifications.
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