
P-channel MOSFET, 55V drain-source breakdown voltage, 12A continuous drain current, and 0.175 ohm maximum drain-source on-resistance. Features a 350pF input capacitance, 37ns fall time, and 23ns turn-off delay time. Operates from -55°C to 175°C with 45W maximum power dissipation. Surface mount D2PAK package, lead-free and RoHS compliant.
International Rectifier IRF9Z24NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 175mR |
| Dual Supply Voltage | 55V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF9Z24NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
