P-channel MOSFET, 55V drain-source breakdown voltage, 12A continuous drain current, and 0.175 ohm maximum drain-source on-resistance. Features a 350pF input capacitance, 37ns fall time, and 23ns turn-off delay time. Operates from -55°C to 175°C with 45W maximum power dissipation. Surface mount D2PAK package, lead-free and RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF9Z24NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
-55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
175mR
Dual Supply Voltage
55V
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
23ns
Turn-On Delay Time
13ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9Z24NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z24NSPBF to view detailed technical specifications.
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