International Rectifier
IRF9Z24NSTRRPBF
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF9Z24NSTRRPBF technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9Z24NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z24NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.