IRF9Z34NPBF

P-channel MOSFET, TO-220AB package, features a continuous drain current of 19A and a drain-to-source voltage of -55V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.1 ohm and a maximum power dissipation of 68W. With a gate-to-source voltage range of 20V and a nominal Vgs of -4V, it boasts fast switching times with turn-on delay at 13ns and turn-off delay at 30ns. Operating across a wide temperature range from -55°C to 175°C, this through-hole mount component is RoHS compliant and lead-free.