IRF9Z34NSTRL

Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

PackageVQFN

MountingSurface Mount

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International Rectifier IRF9Z34NSTRL technical specifications.

Package/Case

VQFN

Continuous Drain Current (ID)

40A

Drain to Source Voltage (Vdss)

30V

Input Capacitance

7.2nF

Max Power Dissipation

3.6W

Mount

Surface Mount

Packaging

Tape and Reel

Rds On Max

1.4mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.