International Rectifier
IRFB16N60L
Power Field-Effect Transistor, 16A I(D), 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Power310W
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Technical Specifications
International Rectifier IRFB16N60L technical specifications.
General
| Drain to Source Breakdown Voltage | 600V |
| Packaging | Rail/Tube |
| Power Dissipation | 310W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFB16N60L Datasheet
Download the complete datasheet for International Rectifier IRFB16N60L to view detailed technical specifications.
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