International Rectifier
IRFB18N50K
Power Field-Effect Transistor, 17A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Current Rating18A
Power200W
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Technical Specifications
International Rectifier IRFB18N50K technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Voltage (Vdss) | 500V |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Power Dissipation | 200W |
| RoHS Compliant | No |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFB18N50K Datasheet
Download the complete datasheet for International Rectifier IRFB18N50K to view detailed technical specifications.
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