N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 24A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.1-ohm drain-source on-resistance and a maximum power dissipation of 170W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C and includes lead-free and RoHS compliant construction. Key switching characteristics include a 14ns turn-on delay and 16ns fall time.
PackageTO-220AB
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFB23N20DPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
24A
Current Rating
24A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
100MR
Dual Supply Voltage
200V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
4.69mm
Input Capacitance
1.96nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
5.5V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Turn-Off Delay Time
26ns
Turn-On Delay Time
14ns
DC Rated Voltage
200V
Width
19.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB23N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFB23N20DPBF to view detailed technical specifications.
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