International Rectifier
IRFB3006GPBF
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB3006GPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 270A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 8.97nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 118ns |
| Turn-On Delay Time | 16ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB3006GPBF Datasheet
Download the complete datasheet for International Rectifier IRFB3006GPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.