International Rectifier
IRFB31N20D
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PackageTO-220AB
Current Rating31A
MountingThrough Hole
Power3.1W
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Technical Specifications
International Rectifier IRFB31N20D technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFB31N20D Datasheet
Download the complete datasheet for International Rectifier IRFB31N20D to view detailed technical specifications.
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