N-Channel Power MOSFET featuring 200V drain-source voltage and 31A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 82mΩ maximum drain-source on-resistance at a nominal 5.5V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and boasts fast switching times with 16ns turn-on and 26ns turn-off delays. The component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating31A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB31N20DPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 82mR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.24mm |
| Input Capacitance | 2.37nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 82mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 200V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB31N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFB31N20DPBF to view detailed technical specifications.
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