International Rectifier
IRFB3206GPBF
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB3206GPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
210A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3MR
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
6.54nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
55ns
Turn-On Delay Time
19ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB3206GPBF Datasheet
Download the complete datasheet for International Rectifier IRFB3206GPBF to view detailed technical specifications.
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