N-channel MOSFET transistor featuring 75V drain-source breakdown voltage and 120A continuous drain current. Offers a low 5.8mΩ maximum drain-source on-resistance. This through-hole component, housed in a TO-220AB package, operates within a -55°C to 175°C temperature range and supports a maximum power dissipation of 230W. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 65ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power230W
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Technical Specifications
International Rectifier IRFB3307ZGPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 5.8MR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 4.75nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 15ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB3307ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRFB3307ZGPBF to view detailed technical specifications.
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