International Rectifier
IRFB33N15D
Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB33N15D technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
33A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
2.02nF
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
56mR
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFB33N15D Datasheet
Download the complete datasheet for International Rectifier IRFB33N15D to view detailed technical specifications.
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