International Rectifier
IRFB33N15DPBF
Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
Current Rating33A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB33N15DPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
56MR
Input Capacitance
2.02nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
5.5V
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
56mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
150V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB33N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFB33N15DPBF to view detailed technical specifications.
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