N-Channel Power MOSFET, TO-220AB package, featuring 75V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 9mΩ Rds On, with 140W maximum power dissipation. Designed for through-hole mounting, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 16ns and fall time of 96ns. This RoHS compliant component is halogen and lead-free.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power140W
Quick Jump:
Technical Specifications
International Rectifier IRFB3607GPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Fall Time
96ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
3.07nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
9mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
43ns
Turn-On Delay Time
16ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB3607GPBF Datasheet
Download the complete datasheet for International Rectifier IRFB3607GPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.