International Rectifier
IRFB3607PBF
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB3607PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 9MR |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 3.07nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB3607PBF Datasheet
Download the complete datasheet for International Rectifier IRFB3607PBF to view detailed technical specifications.
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