International Rectifier
IRFB4110QPBF
Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB4110QPBF technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 78ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4110QPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4110QPBF to view detailed technical specifications.
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