IRFB4115GPBF

Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

PackageTO-220AB

MountingThrough Hole

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International Rectifier IRFB4115GPBF technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	104A
Drain to Source Voltage (Vdss)	150V
Drain-source On Resistance-Max	11MR
Gate to Source Voltage (Vgs)	20V
Height	16.51mm
Input Capacitance	5.27nF
Lead Free	Lead Free
Length	10.67mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	380W
Mount	Through Hole
Nominal Vgs	3V
Package Quantity	50
Packaging	Rail/Tube
Rds On Max	11mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	41ns
Turn-On Delay Time	18ns
Width	4.83mm