International Rectifier
IRFB41N15D
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB41N15D technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
41A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
2.52nF
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
45mR
RoHS Compliant
No
Series
HEXFET®
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFB41N15D Datasheet
Download the complete datasheet for International Rectifier IRFB41N15D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.