N-Channel Power MOSFET, TO-220AB package, featuring 150V drain-source voltage and 41A continuous drain current. Offers a low 45mΩ maximum drain-source on-resistance. Designed for through-hole mounting with a maximum power dissipation of 200W and a nominal gate-source voltage of 5.5V. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-220AB
Current Rating41A
MountingThrough Hole
Power3.1W
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Technical Specifications
International Rectifier IRFB41N15DPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 41A |
| Current Rating | 41A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 45mR |
| Dual Supply Voltage | 150V |
| Input Capacitance | 2.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB41N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFB41N15DPBF to view detailed technical specifications.
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