N-Channel Power MOSFET, TO-220AB package, featuring 150V drain-source voltage and 41A continuous drain current. Offers a low 45mΩ maximum drain-source on-resistance. Designed for through-hole mounting with a maximum power dissipation of 200W and a nominal gate-source voltage of 5.5V. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-220AB
Current Rating41A
MountingThrough Hole
Power3.1W
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Technical Specifications
International Rectifier IRFB41N15DPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
41A
Current Rating
41A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
45mR
Dual Supply Voltage
150V
Input Capacitance
2.52nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
5.5V
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
DC Rated Voltage
150V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB41N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFB41N15DPBF to view detailed technical specifications.
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